This heterojunction was found to exhibit the best photoresponse, with a short response time and high quantum efficiency. To overcome the trade-off between responsivity and speed, a mixed-thickness ReS2/Si was fabricated. A thin ReS2 layer with a Si heterojunction showed weak photosensing performance with a fast response, whereas a thick multilayer ReS2/Si showed an improvement in photocurrent but an overall degradation of the response time. ReS2 flake deposition onto a p++Si substrate led to the formation of an n–p heterojunction with rectifying characteristics and good photosensing ability under reverse bias. We fabricated few-layer, multilayer and mixed-thickness rhenium disulfide (ReS2) based on a vertical van der Waals n–p junction for a photosensing applications. Qilin Cheng, Jinbo Pang, and Dehui Sun contributed equally to this study. Eventually, the dynamic research on WSe 2 and van der Waals heterostructures is summarized to arouse the passion of the 2D research community. Due to its unique electronic, optical, and energy band properties, WSe 2 has been increasingly investigated due to the conductivity of the p-type charge carrier upon palladium contact. The device architectures include field-effect transistors, photodetectors, gas sensors, and photovoltaic solar cells. Therefore, we introduce a state-of-the-art demonstration of heterostructure devices employing the p-type WSe 2 semiconductor. With advantages of light weight, flexibility, and high quantum efficiency, 2D materials may have a niche in optoelectronics as building blocks in p-n junctions. Second, the methods for obtaining high-quality WSe 2, such as exfoli-ation, hydrothermal and chemical vapor deposition, are briefly listed. Here, we report the characterization principles and practices such as microscopy, spectroscopy, and diffraction. First, the readers are presented with the fundamentals of WSe 2, such as types, morphologies, and properties. Similar to graphene, WSe 2 and analogous dichalcogenides have layered structures with weak van der Waals interactions between two adjacent layers. WSe 2 belongs to a family of transition-metal dichalcogenides. The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications.
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